128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

FEATURES  Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V  High speed data transfer rates with system frequency up to 800 MHz  8 internal banks for concurrent operation  8n-bit pre-fetch architecture  Programmable CAS Latency  Programmable Additive Latency: 0, CL-1,CL-2  Programmable

文件：3.72403 Mbytes 页数：75 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes 页数：74 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes 页数：74 Pages

ISSI

矽成半导体

128MX8, 64MX16 1Gb DDR3 SDRAM WITH ECC

文件：3.3993 Mbytes 页数：74 Pages

ISSI

矽成半导体