IS46TR16256A-15HBLA1集成电路（IC）的存储器规格书PDF中文资料

厂商型号	IS46TR16256A-15HBLA1
参数属性	IS46TR16256A-15HBLA1 封装/外壳为96-TFBGA；包装为托盘；类别为集成电路（IC）的存储器；产品描述：IC DRAM 4GBIT PARALLEL 96TWBGA
功能描述	512Mx8, 256Mx16 4Gb DDR3 SDRAM
封装外壳	96-TFBGA
文件大小	3.94166 Mbytes
页面数量	88 页
生产厂商	ISSI
中文名称	矽成半导体
网址	网址
数据手册	下载地址一下载地址二
更新时间	2025-11-11 23:16:00
人工找货	IS46TR16256A-15HBLA1价格和库存，欢迎联系客服免费人工找货

FEATURES

● Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V

● Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V

- Backward compatible to 1.5V

● High speed data transfer rates with system frequency up to 1066 MHz

● 8 internal banks for concurrent operation

● 8n-Bit pre-fetch architecture

● Programmable CAS Latency

● Programmable Additive Latency: 0, CL-1,CL-2

● Programmable CAS WRITE latency (CWL) based on tCK

● Programmable Burst Length: 4 and 8

● Programmable Burst Sequence: Sequential or Interleave

● BL switch on the fly

● Auto Self Refresh(ASR)

● Self Refresh Temperature(SRT)

● Refresh Interval:

7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C

3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C

● Partial Array Self Refresh

● Asynchronous RESET pin

● TDQS (Termination Data Strobe) supported (x8 only)

● OCD (Off-Chip Driver Impedance Adjustment)

● Dynamic ODT (On-Die Termination)

● Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)

● Write Leveling

● Up to 200 MHz in DLL off mode

● Operating temperature:

Commercial (TC = 0°C to +95°C)

Industrial (TC = -40°C to +95°C)

Automotive, A1 (TC = -40°C to +95°C)

Automotive, A2 (TC = -40°C to +105°C)