首页>IS46LR32800H>规格书详情
IS46LR32800H中文资料Mobile DDR SDRAM数据手册ISSI规格书
IS46LR32800H规格书详情
描述 Description
·Double-data rate
·Four internal banks with bank controls
·Programmable Burst Length and CAS Latency
·Power Savings with:- Partial Array Self Refresh (PASR)- Temperature Compenstate Self Refresh- Selectable Output Driver Strength- Deep Power Down
·Long term support
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI |
4 |
询价 | |||||
ISSI |
23+ |
BGA |
4500 |
ISSI存储芯片在售 |
询价 | ||
ISSI |
25+ |
BGA-60 |
16000 |
原装优势绝对有货 |
询价 | ||
ISSI Integrated Silicon Soluti |
23+ |
60TFBGA (8x13) |
9000 |
原装正品，支持实单 |
询价 | ||
ISSI, Integrated Silicon Solu |
23+ |
60-TFBGA8x13 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
ISSI |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ISSI(美国芯成) |
25+ |
封装 |
500000 |
源自原厂成本,高价回收工厂呆滞 |
询价 | ||
ISSI |
24+ |
con |
10000 |
查现货到京北通宇商城 |
询价 | ||
ISSI, Integrated Silicon Solut |
21+ |
- |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
ISSI |
24+ |
n/a |
25836 |
新到现货,只做原装进口 |
询价 |
