4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 页数：27 Pages

ISSI

矽成半导体

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 页数：27 Pages

ISSI

矽成半导体

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 页数：27 Pages

ISSI

矽成半导体

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 页数：27 Pages

ISSI

矽成半导体

4M x 32Bits x 4Banks Mobile Synchronous DRAM

Description These IS42/45VM32160G are mobile 536,870,912 bits CMOS Synchronous DRAM organized as 4 banks of 4,194,304 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the risin

文件：636.13 Kbytes 页数：27 Pages

ISSI

矽成半导体