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IS45S32200E-6TLA1集成电路(IC)存储器规格书PDF中文资料
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厂商型号 |
IS45S32200E-6TLA1 |
参数属性 | IS45S32200E-6TLA1 封装/外壳为86-TFSOP(0.400",10.16mm 宽);包装为托盘;类别为集成电路(IC) > 存储器;产品描述:IC DRAM 64MBIT PAR 86TSOP II |
功能描述 | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
文件大小 |
981.35 Kbytes |
页面数量 |
59 页 |
生产厂商 | Integrated Silicon Solution Inc |
企业简称 |
ISSI【ISSI公司】 |
中文名称 | ISSI有限公司官网 |
原厂标识 | ![]() |
数据手册 | |
更新时间 | 2024-6-21 9:08:00 |
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IS45S32200E-6TLA1规格书详情
OVERVIEW
ISSIs 64Mb Synchronous DRAM IS42/45S32200E is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs achieve high speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
GENERAL DESCRIPTION
The 64Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V memory systems containing 67,108,864 bits. Internally confgured as a quad-bank DRAM with a synchronous interface. Each 16,777,216-bit bank is organized as 2,048 rows by 256 columns by 32 bits.
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length: (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
IS45S32200E-6TLA1属于集成电路(IC) > 存储器。ISSI有限公司制造生产的IS45S32200E-6TLA1存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种,格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等,接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。
产品属性
- 产品编号:
IS45S32200E-6TLA1
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
易失
- 存储器格式:
DRAM
- 技术:
SDRAM
- 存储容量:
64Mb(2M x 32)
- 存储器接口:
并联
- 电压 - 供电:
3V ~ 3.6V
- 工作温度:
-40°C ~ 85°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
86-TFSOP(0.400",10.16mm 宽)
- 供应商器件封装:
86-TSOP II
- 描述:
IC DRAM 64MBIT PAR 86TSOP II
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI |
2020+ |
BGA90 |
3850 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
ISSI Integrated Silicon Soluti |
23+ |
86TSOP II |
9000 |
原装正品,支持实单 |
询价 | ||
ISSI, Integrated Silicon Solut |
21+ |
86-TSOP II |
56200 |
一级代理/放心采购 |
询价 | ||
ISSI |
17+ |
BGA |
6200 |
100%原装正品现货 |
询价 | ||
ISSI |
2022+ |
原厂原包装 |
8600 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
ISSI, Integrated Silicon Solut |
21+ |
54-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
ISSI |
1923+ |
BGA |
21500 |
ISSI专营!正规代理,错过是损失! |
询价 | ||
ISSI |
2020+ |
BGA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
ISSI Integrated Silicon Soluti |
21+ |
86TSOP II |
13880 |
公司只售原装,支持实单 |
询价 | ||
ISSI |
2018+ |
BGA |
11256 |
只做进口原装正品!假一赔十! |
询价 |