IS43SLASH46R32160D中文资料矽成半导体数据手册PDF规格书

FEATURES

• VDD and VDDQ: 2.5V ± 0.2V (-6)

• VDD and VDDQ: 2.6V ± 0.1V (-5)

• SSTL_2 compatible I/O

• Double-data rate architecture; two data transfers

per clock cycle

• Bidirectional, data strobe (DQS) is transmitted/

received with data, to be used in capturing data

at the receiver

• DQS is edge-aligned with data for READs and

centre-aligned with data for WRITEs

• Differential clock inputs (CK and CK)

• DLL aligns DQ and DQS transitions with CK

transitions

• Commands entered on each positive CK edge;

data and data mask referenced to both edges of

DQS

• Four internal banks for concurrent operation

• Data Mask for write data. DM masks write data

at both rising and falling edges of data strobe

• Burst Length: 2, 4 and 8

• Burst Type: Sequential and Interleave mode

• Programmable CAS latency: 2, 2.5 and 3

• Auto Refresh and Self Refresh Modes

• Auto Precharge

• TRAS Lockout Supported (tRAP = tRCD )