1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：3.70132 Mbytes 页数：146 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：3.70132 Mbytes 页数：146 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：3.70132 Mbytes 页数：146 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：3.70132 Mbytes 页数：146 Pages

ISSI

矽成半导体

1Gb (x16, x32) Mobile LPDDR2 S4 SDRAM

FEATURES • Low-voltage Core and I/O Power Supplies VDD2 = 1.14-1.30V, VDDCA/VDDQ = 1.14-1.30V, VDD1 = 1.70-1.95V • High Speed Un-terminated Logic(HSUL_12) I/O Interface • Clock Frequency Range : 10MHz to 533MHz (data rate range : 20Mbps to 1066Mbps per I/O) • Four-bit Pre-fetch DDR Archite

文件：3.70132 Mbytes 页数：146 Pages

ISSI

矽成半导体