IS43DR16640B-3DBLI集成电路（IC）的存储器规格书PDF中文资料

FEATURES

 Clock frequency up to 400MHz

 8 internal banks for concurrent operation

 4‐bit prefetch architecture

 Programmable CAS Latency: 3, 4, 5, 6 and 7

 Programmable Additive Latency: 0, 1, 2, 3, 4, 5

and 6

 Write Latency = Read Latency‐1

 Programmable Burst Sequence: Sequential or

Interleave

 Programmable Burst Length: 4 and 8

 Automatic and Controlled Precharge Command

 Power Down Mode

 Auto Refresh and Self Refresh

 Refresh Interval: 7.8 s (8192 cycles/64 ms)

 ODT (On‐Die Termination)

 Weak Strength Data‐Output Driver Option

 Bidirectional differential Data Strobe (Singleended

data‐strobe is an optional feature)

 On‐Chip DLL aligns DQ and DQs transitions with

CK transitions

 DQS# can be disabled for single‐ended data

strobe

 Read Data Strobe supported (x8 only)

 Differential clock inputs CK and CK#

 VDD and VDDQ = 1.8V ± 0.1V

 PASR (Partial Array Self Refresh)

 SSTL_18 interface

 tRAS lockout supported

 Operating temperature:

Commercial (TA = 0°C to 70°C ; TC = 0°C to 85°C)

Industrial (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A1 (TA = ‐40°C to 85°C; TC = ‐40°C to 95°C)

Automotive, A2 (TA = ‐40°C to 105°C; TC = ‐40°C to

105°C)