1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

文件：548.81 Kbytes 页数：28 Pages

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

文件：548.81 Kbytes 页数：28 Pages

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

文件：548.81 Kbytes 页数：28 Pages

ISSI

矽成半导体

1Gb (x8, x16) DDR2 SDRAM

FEATURES  Clock frequency up to 400MHz  8 internal banks for concurrent operation  4‐bit prefetch architecture  Programmable CAS Latency: 3, 4, 5, 6 and 7  Programmable Additive Latency: 0, 1, 2, 3, 4, 5 and 6  Write Latency = Read Latency‐1  Programmable Burst Sequence: Sequential

文件：548.81 Kbytes 页数：28 Pages

ISSI

矽成半导体