Auto refresh and self refresh

文件：477.09 Kbytes 页数：33 Pages

ISSI

矽成半导体

1M x 16Bits x 2Banks Low Power Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

文件：805.28 Kbytes 页数：34 Pages

ISSI

矽成半导体

1M x 16Bits x 2Banks Low Power Synchronous DRAM

Features • JEDEC standard 3.3V, 2.5V, 1.8V power supply • Auto refresh and self refresh • All pins are compatible with LVCMOS interface • 4K refresh cycle / 64ms • Programmable Burst Length and Burst Type - 1, 2, 4, 8 or Full Page for Sequential Burst - 4 or 8 for Interleave Burst • Progra

文件：805.28 Kbytes 页数：34 Pages

ISSI

矽成半导体

1M x 16Bits x 2Banks Low Power Synchronous DRAM

文件：806.07 Kbytes 页数：34 Pages

ISSI

矽成半导体

1M x 16Bits x 2Banks Low Power Synchronous DRAM

文件：806.07 Kbytes 页数：34 Pages

ISSI

矽成半导体

Mobile/Low Voltage SDR SDRAM

·Synchronous SDRAM interface\n·Multiple Supply Voltage options: 1.8V, 2.5V, 3.3V\n·Full features of standard SDRAM plus mobile:- Partial Array Self Refresh (PASR)- Temperature Compensated Self Refresh- Selectable Output Driver Strength- Deep Power Down\n·Long term support

ISSI

矽成半导体

动态随机存取存储器 32Mb 2Mx16 166MHz Mobile S动态随机存取存储器

ISSI

矽成半导体

动态随机存取存储器 32Mb 2Mx16 133MHz Mobile S动态随机存取存储器

ISSI

矽成半导体

Package：54-TFBGA；包装：托盘托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 32MBIT PARALLEL 54TFBGA

ISSI, Integrated Silicon Solution Inc

Package：54-TFBGA；包装：卷带（TR） 类别：集成电路（IC） 存储器 描述：IC DRAM 32MBIT PARALLEL 54TFBGA

ISSI, Integrated Silicon Solution Inc