64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

文件：913.2 Kbytes 页数：61 Pages

ISSI

矽成半导体

64M x 8, 32M x 16 512Mb SYNCHRONOUS DRAM

OVERVIEW ISSIs 512Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 512Mb SDRAM is organized as follows. FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous;

文件：913.2 Kbytes 页数：61 Pages

ISSI

矽成半导体

ISSI
BGA60

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司

ISSI
BGA-60

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司

ISSI
BGA60

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司