IS42S81600D-6T集成电路（IC）的存储器规格书PDF中文资料

OVERVIEW

ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized as follows.

FEATURES

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

VDD VDDQ

IS42S81600D 3.3V 3.3V

IS42S16800D 3.3V 3.3V

• LVTTL interface

• Programmable burst length

– (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh with programmable refresh periods

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Industrial Temperature Availability

• Lead-free Availability