2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM

文件：927.15 Kbytes 页数：62 Pages

ISSI

矽成半导体

SDR SDRAM

·Synchronous, with 3.3V power supply\n·LVTTL interface\n·Programmable burst length (1, 2, 4, 8, full page)\n·Programmable burst sequence: Sequential/Interleave\n·Self refresh and Auto Refresh modes\n·Random column address every clock cycle\n·Programmable CAS latency (2, 3 clocks)\n·Burst read/write

ISSI

矽成半导体

动态随机存储器(DRAM)

Integrated Silicon Solution

Package：90-TFBGA；包装：托盘 类别：集成电路（IC） 存储器 描述：IC DRAM 256MBIT PARALLEL 90TFBGA

ISSI, Integrated Silicon Solution Inc