IS42S32400E-75ETLI中文资料北京矽成数据手册PDF规格书

OVERVIEW

ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

FEATURES

• Clock frequency: 166, 143, 133 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single Power supply: 3.3V + 0.3V

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh

• 4096 refresh cycles every 16ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command