OVERVIEW

ISSIs 128Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.The 128Mb SDRAM is organized in 1Meg x 32 bit x 4 Banks.

FEATURES

• Clock frequency: 166, 143, 125, 100 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Power supply

VDD VDDQ

IS42S32400B 3.3V 3.3V

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Auto Refresh (CBR)

• Self Refresh with programmable refresh periods

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Available in Industrial Temperature

• Available in 86-pin TSOP-II and 90-ball FBGA

• Available in Lead-free

IS42S32400B-7B属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS42S32400B-7B存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。