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IS42S16400E中文资料PDF规格书
IS42S16400E规格书详情
OVERVIEW
ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.
FEATURES
• Clock frequency: 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length – (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 64 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Byte controlled by LDQM and UDQM
• Package: 400-mil 54-pin TSOP II
• Lead-free package is available
• Available in Industrial temperature
产品属性
- 型号:
IS42S16400E
- 制造商:
ISSI
- 制造商全称:
Integrated Silicon Solution, Inc
- 功能描述:
1 Meg Bits x 16 Bits x 4 Banks(64-MBIT) SYNCHRONOUS DYNAMIC RAM
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ISSI, Integrated Silicon Solut |
21+ |
48-VFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
询价 | ||
ISSI |
23+ |
TSOP |
3000 |
原装正品假一罚百!可开增票! |
询价 | ||
ISSI |
21+ROHS |
TSOP54 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
ISSI |
23+ |
TSOP2(54) |
10800 |
专营ISSI进口原装正品现货假一赔十可开增票 |
询价 | ||
ISS |
21+ |
TSSOP |
6880 |
只做原装 |
询价 | ||
ISS |
TSSOP |
13500 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | |||
ISSI |
24+ |
BGA-54 |
16000 |
原装优势绝对有货 |
询价 | ||
ISSI, Integrated Silicon Solu |
23+ |
54-TFBGA8x8 |
7300 |
专注配单,只做原装进口现货 |
询价 | ||
ISS |
21+ |
TSSOP |
13880 |
公司只售原装,支持实单 |
询价 | ||
ISS |
23+ |
TSSOP |
9920 |
原装正品,支持实单 |
询价 |