1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

文件：848.83 Kbytes 页数：55 Pages

ISSI

矽成半导体

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

文件：848.83 Kbytes 页数：55 Pages

ISSI

矽成半导体

1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

OVERVIEW ISSIs 64Mb Synchronous DRAM IS42S16400E is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.ThesynchronousDRAMsachievehigh-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Cloc

文件：848.83 Kbytes 页数：55 Pages

ISSI

矽成半导体

ISSI
TSOP

ISSI

矽成半导体

上传：深圳市勤思达科技有限公司

ISSI
TSSOP-54

ISSI

矽成半导体

上传：深圳市宇创芯科技有限公司