IS42S16400A中文资料矽成半导体数据手册PDF规格书

OVERVIEW

ISSIs 64Mb Synchronous DRAM IS42S16400A is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance.The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input.

FEATURES

• Clock frequency:166, 133, 100 MHz

• Fully synchronous; all signals referenced to a positive clock edge

• Internal bank for hiding row access/precharge

• Single 3.3V power supply

• LVTTL interface

• Programmable burst length – (1, 2, 4, 8, full page)

• Programmable burst sequence: Sequential/Interleave

• Self refresh modes

• 4096 refresh cycles every 64 ms

• Random column address every clock cycle

• Programmable CAS latency (2, 3 clocks)

• Burst read/write and burst read/single write operations capability

• Burst termination by burst stop and precharge command

• Byte controlled by LDQM and UDQM

• Industrial temperature availability (133MHz, 100MHz)

• Package: 400-mil 54-pin TSOP II, a lead-free package is available.