IS42S16160-6TLI说明书PDF资料批发供应ISSI-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS42S16160-6TLI	文件：949.44 Kbytes Page：60 Pages	256-MBIT SYNCHRONOUS DRAM 文件：949.44 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI
IC42S16160-6TG	文件：1.20221 Mbytes Page：69 Pages	4M x 16Bit x 4 Banks (256-MBIT) SDRAM DESCRIPTION The IC42S16160 are high-speed 256M-bits synchronous dynamic random-access memories, organized as 4M x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7: 133MHz • Fully synchronous operation reference 文件：1.20221 Mbytes 页数：69 Pages	ICSI	ICSI
IC42S16160-6TIG	文件：1.20221 Mbytes Page：69 Pages	4M x 16Bit x 4 Banks (256-MBIT) SDRAM DESCRIPTION The IC42S16160 are high-speed 256M-bits synchronous dynamic random-access memories, organized as 4M x 16 x 4 (word x bit x bank), respectively. FEATURES • Single 3.3V (± 0.3V) power supply • High speed clock cycle time -6: 166MHz, -7: 133MHz • Fully synchronous operation reference 文件：1.20221 Mbytes 页数：69 Pages	ICSI	ICSI
IS42S16160-6BL	文件：949.44 Kbytes Page：60 Pages	256-MBIT SYNCHRONOUS DRAM 文件：949.44 Kbytes 页数：60 Pages	ISSI 矽成半导体	ISSI

更多IS42S16160-6TLI供应商更新时间2025-12-14 11:09:00