IS42S16100-7BLI资料datasheet下载原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS42S16100-7BLI	文件：1.0657 Mbytes Page：81 Pages	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes 页数：81 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7T	文件：739.78 Kbytes Page：78 Pages	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES 文件：739.78 Kbytes 页数：78 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7TI	文件：739.78 Kbytes Page：78 Pages	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM DESCRIPTION ISSI’s 16Mb Synchronous DRAM IS42S16100 is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES 文件：739.78 Kbytes 页数：78 Pages	ISSI 矽成半导体	ISSI
IS42S16100-7TL	文件：1.0657 Mbytes Page：81 Pages	512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 文件：1.0657 Mbytes 页数：81 Pages	ISSI 矽成半导体	ISSI

更多IS42S16100-7BLI供应商更新时间2025-12-12 14:30:00