IS41LV16100S规格书应用电路供应商报价ICSI-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IS41LV16100S	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-45K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-45KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-45T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-45TI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-50K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-50KI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-50T	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-50TI	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI
IS41LV16100S-60K	文件：533.71 Kbytes Page：20 Pages	1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE DESCRIPTION The ICSI IS41C16100S and IS41LV16100S are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 文件：533.71 Kbytes 页数：20 Pages	ICSI	ICSI

详细参数

型号：
IS41LV16100S
制造商：
ICSI
制造商全称：
Integrated Circuit Solution Inc
功能描述：
1M x 16(16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市益百分电子有限公司	IS41LV16100S-50T	ISSI	TSOP44	0450+	301	全新原装进口自己库存优势	询价
芯有半导体（深圳）有限公司	IS41LV16100S-50T	ISSI	06+	TSOP	1000	自己公司全新库存绝对有货	询价
深圳市恒创达实业有限公司	IS41LV16100S-50T	ISSI	17+	器件和集成	6200	100%原装正品现货	询价
深圳市一线半导体有限公司	IS41LV16100S-50T	ISSI	24+	TSSOP	10		询价
深圳市福田区绿盛电子商行	IS41LV16100S-60TI	ISSI	2015+	DIP/SMD	19889	一级代理原装现货,特价热卖!	询价
深圳市卓越微芯电子有限公司	IS41LV16100S-50T	ISSI	25+	TSOP	462	百分百原装正品真实公司现货库存本公司只做原装可	询价
深圳市弘为电子有限公司	IS41LV16100S-50T	TSOP2-44ICS	24+	原厂封装	822	原装现货假一罚十	询价
深圳市利加科技有限公司	IS41LV16100S-50T	ISSI	16+	SOJ-42	50	全新原装现货	询价
深圳市豪迈兴电子有限公司	IS41LV16100S-50T	ISSI	24+	TSOP	5825	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市凌旭科技有限公司	IS41LV16100S-50K	ISSI	2016+	SOJ	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价

更多IS41LV16100S供应商更新时间2026-1-31 15:53:00

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