DESCRIPTION

TheISSIIS41LV16100B is 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memories. These devices offer an accelerated cycle access called EDO Page Mode. EDO Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word.

FEATURES

• TTL compatible inputs and outputs; tristate I/O

• Refresh Interval:

— Auto refresh Mode: 1,024 cycles /16 ms

— RAS-Only, CAS-before-RAS (CBR), and Hidden

• JEDEC standard pinout

• Single power supply: 3.3V ± 10

• Byte Write and Byte Read operation via two CAS

• Industrial Temperature Range: -40oC to +85oC

• Lead-free available

IS41LV16100B属于集成电路（IC） > 存储器。ISSI有限公司制造生产的IS41LV16100B存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。