IS41C16105中文资料1M x 16 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE数据手册ISSI规格书

描述 Description

DESCRIPTION
The ISSI IS41C16105 and IS41LV16105 are 1,048,576 x 16-bit high-performance CMOS Dynamic Random Access Memo ries. Fast Page Mode allows 1,024 random accesses within a single row with access cycle time as short as 20 ns per 16-bit word. The Byte Write control, of upper and lower byte, makes the IS41C16105 ideal for use in 16-, 32-bit wide data bus systems.
These features make the IS41C16105 and IS41LV16105 ideally suited for high-bandwidth graphics, digital signal processing, high performance computing systems, and peripheral applications.
The IS41C16105 and IS41LV16105 are packaged in a 42-pin 400-mil SOJ and 400-mil 44- (50-) pin TSOP (Type II).FEATURES
• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:  1,024 cycles/16 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply:
    5V ± 10% (IS41C16105)
    3.3V ± 10% (IS41LV16105)
• Byte Write and Byte Read operation via two CAS
• Industrail temperature range -40°C to 85°C

特性 Features

• TTL compatible inputs and outputs; tristate I/O
• Refresh Interval:  1,024 cycles/16 ms
• Refresh Mode: RAS-Only, CAS-before-RAS (CBR), and Hidden
• JEDEC standard pinout
• Single power supply:
    5V ± 10% (IS41C16105)
    3.3V ± 10% (IS41LV16105)
• Byte Write and Byte Read operation via two CAS
• Industrail temperature range -40°C to 85°C