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IS29GL256-70FLET集成电路(IC)的存储器规格书PDF中文资料

| 厂商型号 |
IS29GL256-70FLET |
| 参数属性 | IS29GL256-70FLET 封装/外壳为64-LBGA;包装为托盘;类别为集成电路(IC)的存储器;产品描述:IC FLASH 256MBIT PAR 64LFBGA |
| 功能描述 | 3.0V PAGE MODE PARALLEL FLASH MEMORY |
| 封装外壳 | 64-LBGA |
| 文件大小 |
1.53679 Mbytes |
| 页面数量 |
74 页 |
| 生产厂商 | ISSI |
| 中文名称 | 矽成半导体 |
| 网址 | |
| 数据手册 | |
| 更新时间 | 2025-11-4 23:00:00 |
| 人工找货 | IS29GL256-70FLET价格和库存,欢迎联系客服免费人工找货 |
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FEATURES
• Single power supply operation
- Full voltage range: 2.7 to 3.6 volts read and
write operations
• Fast Access Time at -40°C to +125°C:
- 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V
- VIO Input/Output 1.65V to 3.6V.
- All input levels (address, control, and DQ input
levels) and outputs are determined by voltage
on VIO input.
• 8-word/16-byte page read buffer
• 32-word/64-byte write buffer reduces overall
programming time for multiple-word updates
• Secured Silicon Region (SSR)
- 512-word/1024-byte sector for permanent,
secure identification
- 256-word Factory Locked SSR and 256-word
Customer Locked SSR
• Uniform 64Kword/128KByte Sector
Architecture
• Suspend and Resume commands for Program
and Erase operations
• Write operation status bits indicate program
and erase operation completion
• Support for CFI (Common Flash Interface)
• Volatile and non-volatile methods of Advanced
Sector Protection
• WP#/ACC input
- Accelerates programming time (when VHH is
applied) for greater throughput during system
production
- Protects first or last sector regardless of sector
protection settings
• Hardware reset input (RESET#) resets device
• Ready/Busy# output (RY/BY#) detects program
or erase cycle completion
• Minimum 100K program/erase endurance
cycles.
• Data retention : 20 years (TYP)
• Package Options
- 56-pin TSOP
- 64-ball 13mm x 11mm BGA (Call Factory)
- 64-ball 9mm x 9mm BGA
- 56-ball 9mm x 7mm BGA (Call Factory)
• Temperature Range
- Extended Grade: -40°C to +105°C
- Automotive Grade: -40°C to +125°C
产品属性
- 产品编号:
IS29GL256-70FLET
- 制造商:
ISSI, Integrated Silicon Solution Inc
- 类别:
集成电路(IC) > 存储器
- 包装:
托盘
- 存储器类型:
非易失
- 存储器格式:
闪存
- 技术:
FLASH - NOR
- 存储容量:
256Mb(32M x 8)
- 存储器接口:
并联
- 写周期时间 - 字,页:
200µs
- 电压 - 供电:
2.7V ~ 3.6V
- 工作温度:
-40°C ~ 105°C(TA)
- 安装类型:
表面贴装型
- 封装/外壳:
64-LBGA
- 供应商器件封装:
64-LFBGA(11x13)
- 描述:
IC FLASH 256MBIT PAR 64LFBGA
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ISSI(美国芯成) |
24+ |
LFBGA64(11x13) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
ISSI |
24+ |
BGA-64 |
16500 |
全新原厂原装,进口正品现货,正规渠道可含税!! |
询价 | ||
ISSI |
2025+ |
N/A |
2000 |
原装原厂发货7-15工作日 |
询价 | ||
ISSI |
2023+ |
SMD |
4632 |
安罗世纪电子只做原装正品货 |
询价 | ||
ISSI, |
25+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
询价 | |||
ISSI |
25+ |
TSOP56 |
5000 |
原厂原装,价格优势 |
询价 | ||
Cypress |
22+ |
9000 |
原厂渠道,现货配单 |
询价 | |||
Cypress Semiconductor Corp |
24+ |
- |
56200 |
一级代理/放心采购 |
询价 | ||
ISSI(美国芯成) |
23+ |
TSOP56 |
8000 |
只做原装现货 |
询价 | ||
ISSI |
36 |
询价 |

