3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

文件：1.53679 Mbytes 页数：74 Pages

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

文件：1.53679 Mbytes 页数：74 Pages

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

文件：1.53679 Mbytes 页数：74 Pages

ISSI

矽成半导体

3.0V PAGE MODE PARALLEL FLASH MEMORY

FEATURES • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and write operations • Fast Access Time at -40°C to +125°C: - 70ns (1) at Vcc = 3.0V~3.6V, VIO = 3.0V~3.6V - VIO Input/Output 1.65V to 3.6V. - All input levels (address, control, and DQ input levels) and o

文件：1.53679 Mbytes 页数：74 Pages

ISSI

矽成半导体