IS28F010-120W规格书批发采购矽成半导体-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IS28F010-120W	文件：695.87 Kbytes Page：18 Pages	131,072 x 8 CMOS FLASH MEMORY 131,072 x 8 CMOS FLASH MEMORY 文件：695.87 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
IS28F010-120WI	文件：695.87 Kbytes Page：18 Pages	131,072 x 8 CMOS FLASH MEMORY 131,072 x 8 CMOS FLASH MEMORY 文件：695.87 Kbytes 页数：18 Pages	ISSI 矽成半导体	ISSI
N28F010-120	文件：405.78 Kbytes Page：30 Pages	1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit 文件：405.78 Kbytes 页数：30 Pages	Intel 英特尔	Intel
N28F010-120	文件：895.48 Kbytes Page：33 Pages	28F010 1024K (128K X 8) CMOS FLASH MEMORY 文件：895.48 Kbytes 页数：33 Pages	Intel 英特尔	Intel
P28F010-120	文件：405.78 Kbytes Page：30 Pages	1024K (128K x 8) CMOS FLASH MEMORY 28F010 1024K (128K X 8) CMOS FLASH MEMORY Intel’s 28F010 CMOS flash memory offers the most cost-effective and reliable alternative for read/write random access nonvolatile memory. The 28F010 adds electrical chip-erasure and reprogramming to familiar EPROM technology. Memory contents can be rewrit 文件：405.78 Kbytes 页数：30 Pages	Intel 英特尔	Intel

更多IS28F010-120W供应商更新时间2025-12-21 12:12:00