131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

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131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION\nThe IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wide • Organization:\n– 16K-bit x 8-bit\n• 64-Byte Page Write Buffer\n• Two-Wire Serial Interface\n– Bi-directional data transfer protocol\n• Low Power CMOS Technology\n– Active Current less than 2 mA (5V)\n– Standby Current less than 5 µA (5V)\n– Standby Current less than 2 µA (2.5V)\n• Low Voltage Oper;

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体

131,072-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C128 is an electrically erasable PROM device that uses the standard 2-wire interface for communications. The IS24C128 contains a memory array of 128K-bits (16,384 x 8), and is further subdivided into 256 pages of 64 bytes each for page write mode. This EEPROM is offered in wid

文件：53.2 Kbytes 页数：12 Pages

ISSI

矽成半导体