1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24CXX (refers to IS24C01, IS24C02, IS24C04, IS24C08, IS24C16) family is a low-cost and low voltage 2-wire Serial EEPROM. It is fabricated using ISSI’s advanced CMOS EEPROM technology and provides a low power and low voltage operation. The IS24CXX family features a write protecti

文件：85.79 Kbytes 页数：13 Pages

ISSI

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1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24CXX (refers to IS24C01, IS24C02, IS24C04, IS24C08, IS24C16) family is a low-cost and low voltage 2-wire Serial EEPROM. It is fabricated using ISSI’s advanced CMOS EEPROM technology and provides a low power and low voltage operation. The IS24CXX family features a write protecti

文件：85.79 Kbytes 页数：13 Pages

ISSI

矽成半导体

1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

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1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

矽成半导体

1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

矽成半导体

1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

矽成半导体

1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

矽成半导体

1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

矽成半导体

1K-bit/2K-bit 2-WIRE SERIAL CMOS EEPROM

DESCRIPTION The IS24C01B and IS24C02B are electrically erasable PROM devices that use the standard 2- wire interface for communications. The IS24C01B and IS24C02B contain a memory array of 1K-bits (128 x 8) and 2K-bits (256 x 8), respectively. Each device is organized into 8 byte pages for page w

文件：142.16 Kbytes 页数：19 Pages

ISSI

矽成半导体

1K-bit/2K-bit/4K-bit/8K-bit/16K-bit 2-WIRE SERIAL CMOS EEPROM

文件：57.85 Kbytes 页数：16 Pages

ISSI

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