IS21ES04G-JQLA1中文资料北京矽成数据手册PDF规格书

FEATURES

• Packaged NAND flash memory with eMMC 5.0 interface

• IS21/22ES04G: 4Gigabyte

• Compliant with eMMC Specification Ver.4.4, 4.41,4.5,5.0

• Bus mode

- High-speed eMMC protocol

- Clock frequency: 0-200MHz.

- Ten-wire bus (clock, 1 bit command, 8 bit data bus) and a hardware reset.

• Supports three different data bus widths : 1 bit(default), 4 bits, 8 bits

- Data transfer rate: up to 52Mbyte/s (using 8 parallel data lines at 52 MHz)

- Single data rate : up to 200Mbyte/s @ 200MHz (HS200)

- Dual data rate : up to 400Mbyte/s @ 200MHz (HS400)

• Operating voltage range :

- VCCQ = 1.8 V/3.3 V

- VCC = 3.3 V

• Supports Enhanced Mode where the device can be configured as pseudo-SLC (pSLC) for higher

read/write performance, endurance, and reliability.

• Error free memory access

- Internal error correction code (ECC) to protect data communication

- Internal enhanced data management algorithm

- Solid protection from sudden power failure, safe-update operations for data content

• Security

- Support secure bad block erase and trim commands

- Enhanced write protection with permanent and partial protection options

• Field Firmware Update(FFU)

• Boot Partition and RPMB Partition

• Enhanced Device Life time

• Pre EOL information

• Production State Awareness

• Power Off Notification for Sleep

• Temperature range

- Industrial Grade : -40 ℃ ~ 85 ℃

- Automotive Grade (A1): -40 ℃ ~ 85 ℃

• Quality

- RoHS compliant (for detailed RoHS declaration, please contact your representative.)

• Package

- 153 FBGA (11.5mm x 13mm x 1.0mm)

- 100 FBGA (14.0mm x 18.0mm x 1.4mm)