IS2-1009RHSLASHPROTO中文资料瑞萨数据手册PDF规格书

特性 Features

• Electrically screened to SMD #5962-00523

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

• Radiation environment - IS-1009EH

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)

- Low dose rate (0.01rad(Si)/s) . . . . . . . . . . . . . . 50krad(Si)

• Radiation environment - IS-1009RH

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300 krad(Si)

• Latch-up immune. . . . . . . . . . . . . . . . . . dielectrically isolated

• Reverse breakdown voltage (VZ) . . . . . . . . . . . . . . . . . . . . 2.5V

• Change in VZ vs current (400μA to 10mA). . . . . . . . . . . .6mV

• Change in VZ vs temperature (-55°C to +125°C) . . . . .15mV

• Maximum reverse breakdown current . . . . . . . . . . . . . 20mA

• Device is tested with 10μF shunt capacitance connected

from V+ to V-, which provides optimum stability

• Interchangeable with 1009 and 136 industry types