IS-1825ASRH中文资料Single Event and Total Dose Hardened, High-speed, Dual Output PWMs数据手册Renesas规格书

描述 Description

The IS-1825ASRH, IS-1825BSRH, IS-1825BSEH, ISL71823ASRH, and ISL71823BSRH are single event and total dose hardened pulse width modulators designed to be used in high-frequency switching power supplies in either voltage or current-mode configurations. These devices include a precision voltage reference, a low power start-up circuit, a high-frequency oscillator, a wide-band error amplifier, and a fast current-limit comparator.The IS-1825xSRH and IS-1825xSEH feature dual, alternating output operating from zero to less than 50% duty cycle, and the ISL71823xSRH features dual in-phase output operating from zero to less than 100% duty cycle. The B versions of the parts test the delay from clock out to PWM output switching after power has been applied to the modulator (tPWM) (see Figure 2 on page 9). The SEH parts are wafer-by-wafer acceptance tested to 50krad(Si) at a low dose rate of Constructed with the Rad-hard Silicon Gate (RSG) dielectrically isolated BiCMOS process, these devices are immune to single-event latch-up and have been specifically designed to provide a high level of immunity to single-event transients. All specified parameters are established and tested for 300krad(Si) total dose performance.The devices are offered in a 16 Ld CDIP or a 20 Ld CDFP and fully specified to across the temperature range of -50°C to +125°C.

特性 Features

• Electrically screened to DLA SMD# 5962-02511
• QML qualified per MIL-PRF-38535 requirements
• EH version is wafer-by-wafer acceptance tested to 50krad(Si) LDR
• Oscillator frequency: 1MHz (max)
• High output drive current: 1A peak (typ)
• Low startup current: 300μA (max)
• Undervoltage Lockout
• Start threshold: 8.8V (max)
• Stop threshold: 7.6V (min)
• Hysteresis: 300mV (min)
• Pulse-by-pulse current limiting
• Programmable leading edge blanking
• Radiation Hardness
• High Dose Rate (HDR) (50-300rad(Si)/s): 300krad(Si)
• Low Lose Rate (LDR) (0.01rad(Si)/s): 50krad(Si)
• Latch-up immune (dielectrically isolated)
• SEU immune: LET= 35MeV•cm2/mg

应用 Application

• Voltage or current mode switching power supplies
• Control of high current MOSFET drivers
• Motor speed and direction control