IRS2890DS中文资料电平移位门极驱动数据手册Infineon规格书

描述 Description

600 V half-bridge gate driver IC  for IGBTs and MOSFETs with typical 0.22 A source and 0.48 A sink currents in 14-Lead SOIC package with level-shift technology. The IRS2890DS integrates over current protection and fault reporting.

特性 Features

• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout for both channels
• 3.3 V, 5 V, and 15 V input logic compatible
• Matched propagation delay for both channels
• Lower di/dt gate driver for better noise immunity
• Outputs in phase with inputs
• Integrated bootstrap functionality
• Suitable for both trapezoidal and sinusoidal motor control
• Overcurrent protection and fault reporting
• Advanced input filter
• Integrated deadtime protection
• Shoot-through (cross-conduction) protection
• Adjustable fault clear timing

优势:
• High power density is achieved by integrating overcurrent protection, fault reporting, fault clear function, bootstrap FET, undervoltage lockout protection, and shoot-through protection
• Increased device reliability due to rugged hard switching performance and high power capability

简介

IRS2890DS属于集成电路（IC）的栅极驱动器。由制造生产的IRS2890DS栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。