Description

The IRS21091 is a high voltage, high speed power MOSFET and IGBT driver with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Features

• Floating channel designed for bootstrap operation

• Fully operational to +600 V

• Tolerant to negative transient voltage, dV/dt

   immune

• Gate drive supply range from 10 V to 20 V

• Undervoltage lockout for both channels

• 3.3 V, 5 V, and 15 V input logic compatible

• Cross-conduction prevention logic

• Matched propagation delay for both channels

• High-side output in phase with IN input

• Logic and power ground +/- 5 V offset

• Internal 500 ns deadtime, and programmable

   up to 5 µs with one external RDT resistor

• Lower di/dt gate driver for better noise immunity

• The dual function DT/SD input turns off both

   channels

• RoHS compliant

IRS21091SPBF属于集成电路（IC） > 栅极驱动器。英飞凌科技公司制造生产的IRS21091SPBF栅极驱动器栅极驱动器电源管理集成电路 (PMIC) 可用于提供隔离、放大、参考位移、自举或其他必要功能，这些功能可将来自电源转换应用中控制设备的信号连接到电源被控制通过的半导体设备（通常为 FET 或 IGBT）。任何特定设备提供的确切功能各不相同，但与它适合驱动的半导体配置相关。