HALF-BRIDGE DRIVER

Description The IRS2103 is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：363.26 Kbytes 页数：14 Pages

Infineon

英飞凌

HALF-BRIDGE DRIVER

Description The IRS2103 is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：1.39934 Mbytes 页数：14 Pages

IRF

HALF-BRIDGE DRIVER

Description The IRS2103 is a high voltage, high speed power MOSFET and IGBT drivers with dependent high- and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTT

文件：1.39934 Mbytes 页数：14 Pages

IRF

具有击穿保护功能的 600 V 半桥栅极驱动器 IC

600 V Half Bridge Driver IC with typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 8 Lead PDIP. • Floating gate driver designed for bootstrap operation\n• Fully operational to +600 V\n• Tolerant to negative transient voltage, dV/dt immune\n• Gate drive supply range from 10 V to 20 V\n• Undervoltage lockout\n• 3.3 V, 5 V, and 15 V logic input compatible\n• Cross-conduction prevention logic\n• M;

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon

英飞凌

Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 栅极驱动器 描述：IC GATE DRVR HALF-BRIDGE 8SOIC

Infineon

英飞凌