IRLR120NTR资料datasheet下载库存现货IRF-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
IRLR120NTR	文件：184.84 Kbytes Page：11 Pages	Advanced Process Technology Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, 文件：184.84 Kbytes 页数：11 Pages	IRF	IRF
IRLR120NTR	文件：537.34 Kbytes Page：7 Pages	丝印：LR120N；Package：TO-252；100V N-Channel MOSFET VDS(V) = 100V ID = 10A (VGS = 10V) RDS(ON) 文件：537.34 Kbytes 页数：7 Pages	UMW 友台半导体	UMW
IRLR120NTRPBF	文件：299.66 Kbytes Page：11 Pages	Surface Mount (IRLR120N) Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, p 文件：299.66 Kbytes 页数：11 Pages	IRF	IRF
IRLR120NTRLPBF	文件：275.97 Kbytes Page：11 Pages	Advanced Process Technology 文件：275.97 Kbytes 页数：11 Pages	IRF	IRF
IRLR120NTRPBF	文件：979.57 Kbytes Page：7 Pages	N-Channel 100 V (D-S) MOSFET 文件：979.57 Kbytes 页数：7 Pages	VBSEMI 微碧半导体	VBSEMI
IRLR120NTR	文件：300 bytes Page：1 Pages	Advanced Process Technology	Infineon 英飞凌	Infineon

型号：
IRLR120NTR
制造商：
International Rectifier
功能描述：
Single N-Channel 100 V 48 W 20 nC Hexfet Power Mosfet Surface Mount - TO-252AA

更多IRLR120NTR供应商更新时间2026-2-8 9:38:00