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IRLR/U2705

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件:193.8 Kbytes 页数:10 Pages

IRF

IRLR/U2705

HEXFET POWER MOSFET

Infineon

英飞凌

IRLR2705

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件:193.8 Kbytes 页数:10 Pages

IRF

IRLR2705

HEXFET POWER MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for,

文件:202.22 Kbytes 页数:10 Pages

IRF

IRLR2705

N-Channel MOSFET Transistor

文件:335.11 Kbytes 页数:2 Pages

ISC

无锡固电

供应商型号品牌批号封装库存备注价格
IR
22+
6000
终端可免费供样,支持BOM配单
询价
IR
23+
8000
只做原装现货
询价
IR
23+
7000
询价
更多IRLR/U2705供应商 更新时间2025-12-3 14:00:00