Ultra Low On-Resistance

Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6™

文件：154.58 Kbytes 页数：7 Pages

IRF

P-Channel 30-V (D-S) MOSFET

文件：1.04768 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：450.28 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：450.33 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

3-Pin, Low-Power 關P Reset Circuits

文件：147.23 Kbytes 页数：7 Pages

Maxim

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