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IRL3102STRR中文资料HEXFET® Power MOSFET数据手册Infineon规格书
IRL3102STRR规格书详情
描述 Description
These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters. Advanced processing techniques combined with an optimized gate oxide design results
in a die sized specifically to offer maximum efficiency at minimum cost.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.Advanced Process Technology
Surface Mount
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
技术参数
- 型号：
IRL3102STRR
- 功能描述：
MOSFET N-CH 20V 61A D2PAK
- RoHS：
否
- 类别：
分离式半导体产品 >> FET - 单
- 系列：
HEXFET®
- 标准包装：
1,000
- 系列：
MESH OVERLAY™ FET
- 型：
MOSFET N 通道，金属氧化物 FET
- 特点：
逻辑电平门
- 漏极至源极电压(Vdss)：
200V 电流 - 连续漏极(Id) @ 25°
- C：
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C：
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）：
4V @ 250µA 闸电荷(Qg) @
- Vgs：
72nC @ 10V 输入电容(Ciss) @
- Vds：
1560pF @ 25V 功率 -
- 最大：
40W
- 安装类型：
通孔
- 封装/外壳：
TO-220-3 整包
- 供应商设备封装：
TO-220FP
- 包装：
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
23+ |
TO-263 |
3000 |
专做原装正品,假一罚百! |
询价 | ||
IR |
23+ |
TO-220 |
30000 |
全新原装现货,价格优势 |
询价 | ||
IR |
18+ |
TO-220 |
12500 |
全新原装正品,本司专业配单,大单小单都配 |
询价 | ||
Infineon Technologies |
21+ |
D2PAK |
800 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
IR |
25+ |
PLCC-44 |
18000 |
原厂直接发货进口原装 |
询价 | ||
IOR |
24+ |
DIT3P |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
99+ |
TO220 |
67 |
原装现货海量库存欢迎咨询 |
询价 | ||
IR |
24+ |
TO-220-3 |
8866 |
询价 | |||
IR |
24+ |
TO-263 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 |
