Radiation Hardened Power MOSFET Surface Mount (SupIR-SMD™) 200V, 56A, N-channel, R6 Technology

Features  Single event effect (SEE) hardened (up to LET of 90 MeV·cm2/mg)  Low RDS(on)  Low total gate charge  Simple drive requirements  Hermetically sealed  Ceramic package  Light weight  Surface mount  ESD rating: Class 3A per MIL-STD-750, Method 1020 Potential Application

文件：1.45948 Mbytes 页数：14 Pages

IRF

RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-254AA)

文件：149.29 Kbytes 页数：8 Pages

IRF

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

文件：141 Kbytes 页数：8 Pages

IRF

module

IR

国际整流器

上传：深圳市拓亿芯电子有限公司

模块

IR

国际整流器

上传：深圳市正沃电子有限公司