TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)

International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RADHARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. N

文件：127.89 Kbytes 页数：4 Pages

IRF

Simple Drive Requirements

文件：123.51 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

文件：123.51 Kbytes 页数：8 Pages

IRF

Simple Drive Requirements

Infineon

英飞凌