Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Technology

Features • Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2/mg) • Low RDS(on) • Improved SOA for linear mode operation • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Ceramic eyelets • Light weight • ESD

文件：525.01 Kbytes 页数：14 Pages

INFINEON

英飞凌

Rad hard, -200V, -45A, P-channel MOSFET

Single event effect (SEE) hardened\r\nLow RDS(on)\r\nImproved SOA for linear mode operation\r\nFast switching\r\nLow total gate charge\r\nSimple drive requirements\r\nHermetically sealed\r\nElectrically isolated\r\nCeramic eyelets\r\nLight weight\r\nSurface mount\r\nESD rating: Class 3B per MIL-STD-;

Infineon

英飞凌

Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology

Features • Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2/mg) • Low RDS(on) • Improved SOA for linear mode operation • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Light weight ESD rating: Class 3B per

文件：440.68 Kbytes 页数：14 Pages

IRF

module

IR

国际整流器

上传：深圳市拓亿芯电子有限公司

模块

IR

国际整流器

上传：深圳市正沃电子有限公司