IRG4PH40UD2-EPBF规格书应用电路供应商报价-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRG4PH40UD2-EPBF	文件：240.21 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast IGBT Optimized for high operating frequencies up to 200 kHz in resonant mode • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package with extended leads • Lead-F 文件：240.21 Kbytes 页数：11 Pages	IRF	IRF
IRG4PH40UD2-EPBF	文件：240.21 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes 页数：11 Pages	IRF	IRF
IRG4PH40UD2-EPBF_15	文件：240.21 Kbytes Page：11 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE 文件：240.21 Kbytes 页数：11 Pages	IRF	IRF
IRG4PH40UD2PBF	文件：268.07 Kbytes Page：10 Pages	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • IGBT co-packaged with HEXFREDTM ultrafast, ult 文件：268.07 Kbytes 页数：10 Pages	IRF	IRF

更多IRG4PH40UD2-EPBF供应商更新时间2026-2-3 16:00:00