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IRFZ48STRL中文资料威世科技数据手册PDF规格书
IRFZ48STRL规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2 W in a typical surface mount application.
The through-hole version (IRFZ48L/SiHFZ48L) is available for low-profile applications.
FEATURES
• Advanced Process Technology
• Surface Mount (IRFZ48S/SiHFZ48S)
• Low-Profile Through-Hole (IRFZ48L/SiHFZ48L)
• 175 °C Operating Temperature
• Fast Switching
• Lead (Pb)-free Available
产品属性
- 型号:
IRFZ48STRL
- 功能描述:
MOSFET N-Chan 60V 50 Amp
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
20+ |
TO-263 |
800 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SILICONIX (VISHAY) |
23+ |
原厂原封 |
2400 |
订货1周 原装正品 |
询价 | ||
IR |
24+ |
N/A |
6980 |
原装现货,可开13%税票 |
询价 | ||
IR |
24+ |
TO-220 |
36800 |
询价 | |||
IR |
24+ |
TO-220 |
4500 |
只做原装正品现货 欢迎来电查询15919825718 |
询价 | ||
IR |
24+ |
TO-263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
询价 | ||
IR |
23+ |
TO-263 |
9500 |
专业优势供应 |
询价 | ||
NK/南科功率 |
2025+ |
TO-263-2 |
986966 |
国产 |
询价 | ||
IR |
24+ |
TO-263 |
56000 |
公司进口原装现货 批量特价支持 |
询价 | ||
Vishay Siliconix |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
询价 |