IRFW730中文资料仙童半导体数据手册PDF规格书

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies and electronic lamp ballasts based on half bridge.

特性 Features

• 5.5A, 400V, RDS(on) = 1.0Ω @VGS = 10 V

• Low gate charge ( typical 25 nC)

• Low Crss ( typical 20 pF)

• Fast switching

• 100 avalanche tested

• Improved dv/dt capability