HEXFET Power MOSFET

Benefits • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche SOA • Enhanced body diode dV/dt and dI/dt Capability • Lead-Free Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Po

文件：426.56 Kbytes 页数：11 Pages

IRF

High Efficiency Synchronous Rectification in SMPS

文件：330.36 Kbytes 页数：11 Pages

IRF

采用 TO-262 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

\n优势:\n• 符合 RoHS;

Infineon

英飞凌

Single-Channel, High-Speed, Low-side Gate Driver

Features « 4.510 18-V Single Supply Range « Outputs Held Low During VDD UVLO « TTL and CMOS Compatible Input-Logic Threshold « Input Design Output Held Low when Input Pins are Floating « Fast Rise and Fall Times (9ns and 7ns typical) « Fast Propagation Delays (13ns typical) «

文件：4.66984 Mbytes 页数：7 Pages

TECHPUBLIC

台舟电子

Green device available.

文件：649.85 Kbytes 页数：5 Pages

KERSEMI

Excellent package for good heat dissipation.

文件：658.65 Kbytes 页数：4 Pages

KERSEMI