isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -13.2A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.2Ω(Max)@VGS= -10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

isc P-Channel MOSFET Transistor

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ISC

无锡固电

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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SEME-LAB

POWER MOSFET THRU-HOLE (TO-257AA)

100V, P-CHANNEL HEXFET® MOSFET TECHNOLOGY HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all o

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IRF

Simple Drive Requirements

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IRF