首页 >IRFR9N20DPB>规格书列表
| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
HEXFET Power MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free 文件：222.52 Kbytes 页数：10 Pages | IRF | IRF | ||
SMPS MOSFET Benefits ● Low Gate-to-Drain Charge to Reduce Switching Losses ● Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) ● Fully Characterized Avalanche Voltage and Current Applications ● High frequency DC-DC converters ● Lead-Free 文件：3.8431 Mbytes 页数：10 Pages | KERSEMI | KERSEMI | ||
High frequency DC-DC converters 文件：231.67 Kbytes 页数：11 Pages | IRF | IRF | ||
High frequency DC-DC converters 文件：231.67 Kbytes 页数：11 Pages | IRF | IRF |
详细参数
- 型号：
IRFR9N20DPB
- 功能描述：
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
327 |
只做原厂渠道 可追溯货源 |
询价 | ||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
询价 | ||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
IR |
20+ |
DPAK |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
IR |
20+ |
TO |
11520 |
特价全新原装公司现货 |
询价 | ||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
IR |
23+ |
TO |
30000 |
代理全新原装现货,价格优势 |
询价 | ||
IR |
24+ |
65230 |
询价 | ||||
IR |
10+PBF |
TO-252 |
327 |
优势 |
询价 | ||
Infineon |
1931+ |
N/A |
493 |
加我qq或微信，了解更多详细信息,体验一站式购物 |
询价 |
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