IRFR310TRRPBFA资料datasheet下载原装现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR310TRRPBFA	文件：3.93309 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.93309 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFU310	文件：173.78 Kbytes Page：6 Pages	Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A) 文件：173.78 Kbytes 页数：6 Pages	IRF	IRF
IRFU310	文件：1.41713 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：1.41713 Mbytes 页数：8 Pages	VISHAYVishay Siliconix 威世威世科技公司	VISHAY
IRFU310	文件：3.93235 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs form Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st 文件：3.93235 Mbytes 页数：7 Pages	KERSEMI	KERSEMI

更多IRFR310TRRPBFA供应商更新时间2026-1-31 11:04:00