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IRFR210TRPBF中文资料威世科技数据手册PDF规格书
IRFR210TRPBF规格书详情
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount (IRFR210/SiHFR210)
• Straight Lead (IRFU210/SiHFU210)
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available
产品属性
- 型号：
IRFR210TRPBF
- 功能描述：
MOSFET N-Chan 200V 2.6 Amp
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
TO-252 |
500890 |
免费送样原盒原包现货一手渠道联系 |
询价 | ||
IR |
2023+ |
TO-252 |
50000 |
原装现货 |
询价 | ||
SILICONIX (VISHAY) |
23+ |
原厂原封 |
2000 |
订货1周 原装正品 |
询价 | ||
Vishay |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
VISHAY |
25+ |
SOT252 |
12500 |
原厂原装,价格优势 |
询价 | ||
Vishay(威世) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
VISHAY/威世 |
22+ |
TO252 |
8000 |
原装正品支持实单 |
询价 | ||
IR9 |
25+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
询价 | ||
VISHAY/威世 |
24+ |
TO-252 |
6098 |
只做原厂渠道 可追溯货源 |
询价 | ||
VISHAY |
24+ |
TO-252 |
12000 |
VISHAY专营进口原装现货假一赔十 |
询价 |
