IRFR210TRPBF-TP规格书原装现货台舟电子-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
IRFR210TRPBF-TP	文件：2.86747 Mbytes Page：5 Pages	丝印：FL210；Package：SOT223；N-Channel Enhancement Mode Power MOSFET GENERAL FEATURES Vos = 200V = 10A @Vos = 10v. B Roson $1350 @Vos= 10V 507-223 package. \| 文件：2.86747 Mbytes 页数：5 Pages	TECHPUBLIC 台舟电子	TECHPUBLIC
IRFR210TRR	文件：2.39965 Mbytes Page：8 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：2.39965 Mbytes 页数：8 Pages	VishayVishay Siliconix 威世科技	Vishay
IRFR210TRRA	文件：4.91599 Mbytes Page：7 Pages	Power MOSFET DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Th 文件：4.91599 Mbytes 页数：7 Pages	KERSEMI	KERSEMI
IRFR210TRRPBF	文件：834.32 Kbytes Page：11 Pages	Power MOSFET 文件：834.32 Kbytes 页数：11 Pages	VishayVishay Siliconix 威世科技	Vishay

更多IRFR210TRPBF-TP供应商更新时间2025-10-6 10:05:00